Lehighton-2000RS 電阻與遷移率量測儀

Extremely low surface recombination velocities on low‐resistivity n‐type and p‐type crystalline silicon using dynamically deposited remote plasma silicon nitride films

作者: Shubham Duttagupta, Fen Lin, Marshall Wilson, Matthew B Boreland, Bram Hoex, Armin G Aberle

主題: corona-voltage metrology; Non-Contact Measurement; photovoltaics; silicon defect density; Silicon Nitride; surface passivation; surface recombination velocity