Abstract:
Photo-modulated reflectance (PMR) is a sensitive optical technique applied for monitoring implantation-induced damage in Si wafers. In this work, we demonstrate that PMR is suitable for the characterization of Si wafers annealed by both melting and non-melting laser annealing methods. The PMR signal shows a linear correlation with normalized laser energy density, with R2 = 0.944 (melting) and R2 = 0.957 (non-melting), which is consistent with four-point probe sheet resistance and thermal annealing relation. These results confirm that PMR provides a fast, non-destructive and non-contact metrology for evaluating annealed wafers, offering potential for precise inline process control.
主题
AnnealingSiliconMeasurement by laser beamLaser excitationResistanceTemperature measurementCrystalsLasersElectrical resistance measurementPump lasers
作者
D. Ullrich, J. Szivós, B. Dénes, Z. Deli, G. Fekete, Z. Bozóki, S. Lenk, Z. Zolnai, G. Nádudvari, L. Balogh
