Contact us for Information and Pricing
Get expert advice and tailored solutions for your research needs
Contact us for Information and Pricing
Get expert advice and tailored solutions for your research needs
2006 • International Conference on Ion Implantation Technology - IIT 2006
A photoelectric method based on surface photovoltage effect (SPV) has been developed for monitoring of implanted silicon. A phenomenological model explaining major implant correlations has been proposed. The mechanisms for implant dose and energy sensitivities of the method have been identified.
K. Steeples, E. Tsidilkovski