Ballistic Electron Emission Microscopy of Schottky Diodes on RF-Plasma-Treated Silicon
Author: L. Quattropani, K. Solt, P. Niedermann, I. Maggio-Aprile, O. Fischer, T. Pavelka
Topic: Schottky diode; RF plasma treated silicon
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• Sample size: 200 mm
• Sample thickness: <18 mm
• XY movement of sample: 200 x 250 mm
• Scanner: Planar scanner
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• Software: Measurement Control & Analysis Software
AFM-2000 Atomic Force Microscopy
Author: L. Quattropani, K. Solt, P. Niedermann, I. Maggio-Aprile, O. Fischer, T. Pavelka
Topic: Schottky diode; RF plasma treated silicon
Author: Katalin Csonti, Csilla Fazakas, Kinga Molnár, Imola Wilhelm, István A. Krizbai, Attila G. Végh
Topic: adhesion assay; Zeiss AFM; single-cell force spectroscopy
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Topic: Kelvin force microscopy; corona charge; concentration profile; surface diffusion
Author: Dmitriy Marinskiy, Patrick Polakowski, Jacek Lagowski, Marshall Wilson, Piotr Edelman, Johannes Müller
Topic: corona - Kelvin; Non-Contact Measurement; THIN FILM CHARACTERIZATION
Author: P.M. Nagy, D. Aranyi, P. Horváth, G. Pető, E. Kálmán
Topic: nanoindentation; Ion Implantation; mechanical properties; AFM
Author: Bálint Szentpéteri; Albin Márffy; Máté Kedves; Endre Tóvári; Bálint Fülöp; István Kükemezey; András Magyarkuti; Kenji Watanabe; Takashi Taniguchi; Szabolcs Csonka; Péter Makk
Topic: Pressure effects; Quantum Hall effect; Spin-orbit coupling; Weak antilocalization; Bilayer graphene; Graphene; Heterostructures; Transition metal dichalcogenides; Shubnikov-de
AFM-2000 Atomic Force Microscopy