We present a refined non-contact doping density determination in silicon carbide that incorporates 3 novel features: (1) constant surface potential method of corona charging into depletion; (2) vibrating Kelvin probe measurement of depletion surface voltage and voltage compensation maintaining constant surface potential, and (3) a unique self-consistent procedure for data analysis. The results obtained on epitaxial SiC demonstrate up to 3 times improved accuracy and enhanced repeatability giving 1σ in 10 repeats of 0.05% and 0.1% for doping in e15cm-3 and e19cm-3 range, respectively. An enhanced charging range enables measurement of high doping density in the e19cm-3 range and to achieve larger depth in doping profiling. With these refinements, a non-contact doping metrology for SiC represents an industry ready alternative to Hg-CV.
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